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Data Sheet No. PD-6.058D
IR51HD214
SELF-OSCILLATING HALF-BRIDGE
Features
n n n n n n n
Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 C) 250V 50% 1.2s 2.0 2.0W
Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 1. 4 x (RT + 75 ) x CT Zener clamped Vcc for offline operation Half-bridge output is out of phase with RT
f=
Description
The IR51HD214 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET(R) power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 250 volts.
Package
IR51HD214 9506
Typical Connection
U P TO 250V D C BUS V IN
IR 5 1 H D 2 1 4
1
V CC V B
6
2
R T V IN
9
RT 3
C T VO
7
CT 4
COM
TO LO AD
COM
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IR51HD214
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
VIN VB VO VRT VCT ICC IRT dv/dt PD RJA TJ TS TL
Parameter Definition
High Voltage Supply High Side Floating Supply Absolute Voltage Half-Bridge Output Voltage RT Voltage CT Voltage Supply Current (Note 1) RT Output Current Peak Diode Recovery dv/dt Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds)
Min.
-0.3 -0.3 -0.3 -0.3 -0.3 ---5 -------55 -55 ---
Max.
250 275 VIN + 0.3 VCC + 0.3 VCC + 0.3 25 5 4.8 2.00 60 150 150 300
Units
V
mA V/ns W C/W C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions.
Symbol
VB VIN VO ID ICC TA Note 1:
Parameter Definition
High Side Floating Supply Absolute Voltage High Voltage Supply Half-Bridge Output Voltage Continuous Drain Current (TA = 25C) (TA = 85C) Supply Current (Note 1) Ambient Temperature
Min.
VO + 10 -----------40
Max.
VO + VCLAMP 250 250 0.85 0.55 5 125
Units
V A mA C
Because of the IR51HD214's application specificity toward off-line supply systems, this IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC supply voltage is normally derived by current feeding the VCC lead (typically by means of a high value resistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC, low impedance power source of greater than VCLAMP.
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IR51HD214
Dynamic Electrical Characteristics
VBIAS (VCC, VB) = 12V unless otherwise specified.
Symbol
trr Qrr DT D
Parameter Definition
Reverse Recovery Time (MOSFET Body Diode) Reverse Recovery Charge (MOSFET Body Diode) Deadtime, LS Turn-Off to HS Turn-On & HS Turn-Off to LS Turn-On RT Duty Cycle
TA = 25C Min. Typ. Max. Units
--------190 0.64 1.2 50 --------ns C s %
Test Conditions
IF = 850mA di/dt = 100A/s
f OSC = 20 kHz
Static Electrical Characteristics
VBIAS (VCC, VB) = 12V unless otherwise specified.
Symbol
Parameter Definition
TA = 25C Min. Typ. Max. Units
------------50 ----8.4 8.0 300 15.6 30 V 20 100 --V --------A V A
Test Conditions
Supply Characteristics VCCUV+ VCC Supply Undervoltage Positive Going Threshold VCCUV- VCC Supply Undervoltage Negative Going Threshold IQCC Quiescent VCC Supply Current VCLAMP VCC Zener Shunt Clamp Voltage Floating Supply Characteristics IQBS Quiescent VBS Supply Current IOS Offset Supply Leakage Current--Oscillator I/O Characteristics f OSC Oscillator Frequency
ICC = 5 mA
B
= VIN = 250V
--kHz --1.0 A 2.5V < V ----mV --------V ---- V
RT = 35.7 k, CT = 1 nF RT = 7.04 k, CT = 1 nF
CC < VCCUV+ IRT = -100 A IRT = -1 mA IRT = 100 A IRT = 1 mA 2.5V < VCC < VCCUV+
ICT VCTUV VRT+ VRT-
CT Input Current CT Undervoltage Lockout --RT High Level Output Voltage, VCC - RT RT Low Level Output Voltage
100
VRTUV RT Undervoltage Lockout, VCC - RT VCT+ 2/3 VCC Threshold VCT1/3 VCC Threshold Output Characteristics RDS(on) Static Drain-to-Source On-Resistance VSD Diode Forward Voltage --0.8
--- 0.001 ----20 --200 --20 --200 --100 --8.0 --4.0 --2.0
---
ID = 850mA Tj = 150 C
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IR51HD214
Functional Block Diagram
VB 6 1 V CC 2 RT 3 CT IRFC214 IR2151 7 VO IRFC214 VIN 9
4 COM
Lead Definitions
Symbol
VCC
Lead Description
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V nominal is included to allow the Vcc to be current fed directly from VIN typically by means of a high value resistor. Oscillator timing resistor input; a resistor is connected from RT to CT . RT is out of phase with the half-bridge output (VO). Oscillator timing capacitor output; a capacitor is connected from CT to COM in order to program the oscillator frequency according to the following equation: 1
RT CT
f=
1. 4 x (RT + 75 ) x CT
VB VIN VO COM
where 75 is the effective impedance of the RT output stage. High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from VCC to VB. High voltage supply. Half-bridge output. Logic and low side of half-bridge return.
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IR51HD214
Lead Assignments
1
2
3
4
6 VB
7 V0
9 VIN
VCC RT
CT COM
9 Lead SIP w/o Leads 5 & 8
IR51HD214
VCCUV+ VCC
VCLAMP
RT
50% 50%
RT CT V+ VO 0
HIGH SIDE LOW SIDE
90% 10% DT
90%
10%
Figure 1. Input/Output Timing Diagram
Figure 2. Deadtime Waveform Definitions
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IR51HD214
Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com
Sales Offices, Agents and Distributors in Major Cities Throughout the World.
(c) 1996 International Rectifier Printed in U.S.A. 3-96
Data and specifications subject to change without notice.
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